subject: Vacuum Dryer Of Drying Semiconductor Device Using The Same [print this page] A vacuum dryer and a method of drying a semiconductor device using the same are provided. In the present invention, a vacuum dryer using isopropyl alcohol vapor, including an outer bath, an inner bath, a main water supply line, a supplementary water supply line, an inner bath drain line, and an outer bath drain line, is provided. After cleaning the inside of the vacuum dryer, the inner bath is filled with the supplied deionized water and the deionized water is continuously overflowed. Then, the semiconductor substrate is loaded into the inner bath of the vacuum dryer to which the deionized is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.
The vacuum dryer of claim 2, wherein the supplementary water supply line and the main water supply line are connected to each other and to the inner bath so as to switch between the main water supply line and the supplementary water supply line.
The vacuum dryer of claim 6, wherein the supplementary water supply line and the main water supply line are connected to each other and to the inner bath so as to allow switching from the main water supply line to the supplementary water supply line.
A vacuum dryer is obtained by improving the above-mentioned IPA vapor dryer. In the drying method in which the vacuum dryer is used, the amount of IPA consumed is less than that of the IPA vapor dryer. Therefore, it is possible to reduce the degree of environmental pollution caused by the IPA. Also, it is possible to obtain an excellent drying effect regardless of the presence of the pattern. However, as the semiconductor device is further integrated, recontamination by particles in the drying method in which the vacuum dryer is used comes into question. Therefore, a method of drying a semiconductor device by which it is possible to more stably prevent recontamination by particles is required.
by: ericfu
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