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subject: Machanism Of Vacuum Dryer [print this page]


Accordingly, to achieve the first objective, there is provided a vacuum dryer, comprising an outer bath, an inner bath located inside the outer bath and into which a semiconductor substrate is loaded, a water supply line connected to the inner bath for supplying deionized water to the inner bath, an inner bath drain line connected to the inner bath for draining the deionized water filled in the inner bath, and a supply pipe connected to the outer bath for supplying isopropyl alcohol vapor to the semiconductor substrate loaded into the inner bath.

A vacuum dryer is obtained by improving the above-mentioned IPA vapor dryer. In the drying method in which the vacuum dryer is used, the amount of IPA consumed is less than that of the IPA vapor dryer. Therefore, it is possible to reduce the degree of environmental pollution caused by the IPA. Also, it is possible to obtain an excellent drying effect regardless of the presence of the pattern. However, as the semiconductor device is further integrated, recontamination by particles in the drying method in which the vacuum dryer is used comes into question. Therefore, a method of drying a semiconductor device by which it is possible to more stably prevent recontamination by particles is required.

To achieve the second objective, there is provided a method of drying a semiconductor device. In the method, deionized water is continuously supplied to an inner bath of a vacuum dryer using IPA vapor comprised of an outer bath, an inner bath, and deionized water supplied through water supply lines to fill the inner bath with the deionized water, such that the deionized water is continuously overflowed from the inner bath to the outer bath. A semiconductor substrate is loaded into the inner bath-from which the deionized water is continuously overflowed. The loaded semiconductor substrate is dried by supplying the isopropyl alcohol vapor to the inner bath into which the semiconductor substrate is loaded.

by: ericfu




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